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 TH7888A
AREA ARRAY CCD IMAGE SENSOR 1024 x 1024 PIXELS WITH ANTIBLOOMING
n n n
n n n n n n
1024 x 1024 pixels with memory zone Up to 30 images / second Built-in antiblooming device providing an electronic shutter function. Pixel : 14 mm x 14 mm Image zone : 14,34 x 14,34 mm 2 outputs at 20 MHz each Readout through 1 or 2 ouputs Possible binning 2 x 2 Optical shield against parasitic reflexions and stray light A/R window in 400 - 700 nm bandwidth Optional integrated Peltier cooler
PIN IDENTIFICATION
Pin N Y9 AA9 Y10 AA10 Y5 AA5 Y6 AA6 Y4 B2 A2 A3 B3 B1 A1 A9 A8 B10 B8 B7 A6 A10 B9 B4 Y7 A7 AA7 A4, A5, B5, B6 Y8, AA4, AA8 AA1, AA2 Y1, Y2 Symbol FP1 FP2 FP3 FP4 FM1 FM2 FM3 FM4 FM FL1 FL2 FL3 FL4 FL5 FL6 VDD1 VDD2 VS1 VS2 VDP VGS VOS1 VOS2 FR FA VDR VA VSS VSS PELTIER+ Designation
n n
Image zone clocks
Memory zone clocks Memory to register clock
Readout register clocks
Output amplifier drain supply Output amplifier source supply Protection drain bias Register output gate bias Video outputs Reset clock Antiblooming gate clock Reset bias Antiblooming diode bias Substrate bias
Figure 1 : TH7888A organization
Y3 AA3
OPTIONAL Peltier cooler power supply PELTIER NC otherwise PT+ OPTIONAL Temperature sensor Pt 100W DIN43760 PTNC otherwise
November 1999
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DESCRIPTION TH7888A is especially designed for high data rate applications (up to 30 pict /s in 1024x1024 format progressive scan) in medical and industrial fields. This area array image sensor consists of a 1024 x 1024 pixels (14 mm x 14 mm) image zone associated to a memory zone (masked with optical shield). In order to increase data rate, it is provided 2 separate outputs that can be used for parallel readout. (readout frequency up to 20 MHz / output leading to a total readout frequency of 40 MHz). These two outputs allow 3 readout modes (single or dual port readout). TH7888A is designed with antiblooming structure providing electronic shutter capability. Moreover the 2 x 2 binning mode is available on this sensor. In that case, the image size is 512 x 512 with 28 mm x 28 mm pixels. TH7888A package is sealed with a specific anti-reflective window optimized in 400-700 nm spectrum bandwidth. OPTIONS : the device can be delivered with integrated low power Peltier cooler in order to improve sensor performances in high temperature environments (typically + 50C). FUNCTIONAL DIAGRAM Figure 1 gives the general sensor organization. Extra dark lines are provided for use as dark references or for smearing digital correction. Extra dark pixels are provided for line dark reference clamping. Each frame is made of 1056 video lines :
n n n n n n n
1 dummy line 12 useful dark reference lines (with optical shield) 3 isolation lines 1024 useful lines 3 isolation lines 12 dark reference lines (with optical shield) 1 dummy line
Each video line is made of 546 or 1058 elements, depending on readout mode (single or dual port modes):
n n n n n
12 inactive prescan elements 1 isolation element 16 useful dark references (with optical shield) 5 isolation elements 512 or 1024 useful video pixels
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GEOMETRICAL CHARACTERISTICS
Figure 2b : Pixel layout
Figure 2c : Cross-section AA'
ABSOLUTE MAXIMUM RATINGS Storage temperature ............................................................................................................................................-55C to +150C Operating temperature...........................................................................................................................................-40C to +85C Thermal cycling ...............................................................................................................................................................15C / mn Maximum applied voltages : Y9, AA9, Y10, AA10, Y5, AA5, Y6, AA6, Y4, B2, A2, A3, B3, B1, A1, B4, A6 .................................................-0.3 to 15 V A9, A8, B10, B8, B7, A7, AA7 ...........................................................................................................................-0.3 V to 15.5 V Y7..............................................................................................................................................................................-0.3 V to 12 V A4, A5, B5, B6, Y8, AA4, AA8 ..................................................................................................................................0V (ground)
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PELTIER OPTION Storage temperature ..............................................................................................................................................-55C to +85C Operating temperature...........................................................................................................................................-40C to +70C Thermal cycling ...............................................................................................................................................................10C / mn Maximum applied voltages : PIN AA1, AA2 with respect to Y1, Y2 MAX VOLTAGE RANGE 5V MAX CURRENT RANGE 1.8 A
Stresses above those listed under absolute maximum ratings may cause permanent device failure. Functionality at or above these limits is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability. Operating range defines the limits whithin which the functionality is guaranteed. Electrical limits of applied signals are given in operating conditions section OPERATING PRECAUTIONS Shorting the video outputs to any other pin, even temporarily, can permanently damage the on-chip output amplifier. OPERATING CONDITIONS TABLE 1 - DC CHARACTERISTICS PARAMETER Output amplifier drain supply Protection drain bias Reset bias Antiblooming diode bias Register output gate bias Output amplifier source supply Ground * OPTIONAL Peltier power supply ** Voltage accross Peltier IPELTIER VPELTIER 1.1 3 A V SYMBOL Min. VDD1, VDD2 VDP VDR VA VGS VS1,2 VSS 14.5 14.5 14.5 14.5 2.2 VALUE Typ. 15 15 15 15 2.5 0 0 Max. 15.5 15.5 15.5 15.5 2.8 V V V V V V V UNIT
* Ground : note that the package metal back is internally grounded. ** Peltier power supply : conditions for 10C sensor temperature with 50C external temperature.
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TIMING DIAGRAMS Readout Mode The serial readout register is operated in a two phase transfer mode. However, there are provided 6 separated command electrodes that shall be connected differently depending on the required readout mode. The following table gives the connections to be made for each mode: Readout modes U Drive clocks (signals) FL1 FL2 pins B2, B3, B1 pins A2, A3, A1 1 output, VOS1 1 output, VOS2 (mirror effect) pins B2, A3, A1 pins A2, B3, B1 pins B2, B3, A1 pins A2, A3, B1 2 outputs (parallel)
The following diagrams are given for 20 MHz readout frequency, 1.25 MHz vertical transfer frequency
Figure 3 : Frame timing diagram
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1 : 12 Inactive pre-scan elements 2 : 1 isolation element 2 : 16 dark ref pixels 2 : 5 isolation elements
3 3 2 3
: : : :
1024 useful video pixels (single output readout mode) 512 useful video pixels (dual output readout mode)
Figure 4 : Line timing diagram
Figure 5 : Vertical transfer during Image to memory zone transfer
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Figure 6 : Transfer period from image zone to memory zone (FP and FM) for 1.25 MHz vertical transfer frequency (Fv = 1 / Tv ).
t1 = 7 ns typ.
t2 = 5 ns typ.
td = 8 ns typical delay time
Figure 7 : Output diagram for readout register and reset clock 20 MHz applications. Cross over of complementary clocks (F L1, F L2) Figure 7 : between 30% and 70 % of max. amplitude.
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BINNING MODE OPERATION In this mode, the image is composed of 512 x 512 pixels (28 mm x 28 mm each).
Fall times & rise times : see fig. 6& 7
Figure 8 : Summation in the readout register of 2 adjacent lines.
Figure 9 : Summation of 2 adjacent pixels
In binning mode operation, maximum level of elementary pixel (14 x 14 mm) is reduced to Vsat / 4.
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EXPOSURE TIME REDUCTION TH7888A allows exposure time control (electronic shutter function). The exposure time reduction is achieved by pulsing all the FPi gates to 0 volt so as to remove continuously all the photogenerated electrons through antiblooming drain VA.
Fall times & rise times : see fig. 5 & 6 Figure 10 : Timing diagram for electronic shutter
TABLE 2 - DRIVE CLOCK CHARACTERISTICS Parameter Image zone clocks High level Low level Memory zone clocks High level Low level Memory to register clocks High level Low level Antiblooming gate High level (integration) Low level (transfer) Reset gate High level Low level Readout register clocks FL1,2 FR 10 0 12 2 13 3 V V FA 3 0 4 0.5 7 0.8 V V FM 8.5 0 9 0.5 9.5 0.8 V V FM1,2,3,4 7.5 0 8 0.5 8.5 0.8 V V Symbol Min FP1,2, 3,4 7.5 0 8 0.5 8.5 0.8 V V Value Typ Max Typical input capacitance 15 nF See figure 11 Typical input capacitance 15.5 nF See figure 11 Typical input capacitance 10 pF Typical input capacitance 14 nF See figures 11 & 13 Typical input capacitance 10 pF Unit Remarks
High level Low level Maximum readout register frequency Image zone to memory zone transfer frequency
8.5 0 FH FV
9 0.5 20 1.25
9.5 0.8 23 1.7
V V MHz MHz
See figure 7 See figure 12
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Figure 11 : Drive clocks capacitance network
TABLE 3 - STATIC AND DYNAMIC ELECTRICAL CHARACTERISTICS PARAMETER Output amplifier supply current Output impedance DC output level Output conversion factor SYMBOL Min. IDD Zs VREF CVF 200 5.5 VALUE TYP. 10 225 11 6 6.5 250 Max. mA W V V/ eper amplifier UNIT REMARKS
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ELECTROOPTICAL PERFORMANCE * General conditions : Temp = 25C (package back temperature) Light source : 2854K with 2 mm BG38 filter (unless specified) + F/3.5 optical aperture . 30 images per second mode (unless specified) Typical operating conditions. * Readout mode : 2 outputs * Values exclude dummy elements and blemishes. PARAMETER Output register saturation level Pixel saturation level Pixel saturation charge (electron per pixel) Responsivity at 640 nm Responsivity with BG38 filter Quantum efficiency at 640 nm Photo response non uniformity (1s) Dark signal non uniformity (1s) Average dark signal Temporal RMS noise in darkness (Last line) Dynamic range Horizontal modulation transfer function at 500 nm Vertical charge transfer inefficiency Horizontal charge transfer inefficiency Note Note Note Note Note Note Note Note Note Note Note 1 1 2 3 4 5 5 6 7 8 9 : : : : : : : : : : : SYMBOL Min. VSAT reg VSAT QSAT R QE PRNU DSNU VDS VN D MTF VCTI HCTI 2.3 1.6 270 VALUE TYP. 2.6 1.9 320 6.5 11 15 1.3 0.28 2 4 200 80 70 2.10-5 7.10-5 1.7 0.4 3 5.6 2.2 370 Max. V V keV/J/cm mV/lux % % VOS mV mV mV V dB % Note 2 Note 3 Note 4 Note 5 Note 6 Note 7 Note 8 Note 9 see fig.15 Note 1 UNIT REMARKS
Pixel saturation (full well) as a function of vertical transfer frequency (see figure 12) and antiblooming adjustment (see figure13). After subtraction of dark signal slope due to memory readout time First line level referenced from inactive prescan elements (12 samples) Last line level referenced from inactive prescan elements (12 samples) Measured with Correlated Double Sampling (CDS) including 160 V readout noise and dark current noise in the general test conditions. Saturation to RMS noise in darkness ratio. At Nyquist frequency. VSAT / 2 measurement and 1.25 MHz vertical transfer frequency. VSAT / 2 measurement and 20 MHz horizontal transfer frequency.
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Figure 12 : Saturation level by full well with antiblooming out (FA high = 0 volt) vs the vertical transfer frequency.
Figure 13 : Saturation level limitation by the antiblooming effect on the pixel (Typical operating conditions)
V T SMEARING = NESAT x V x H V TI SAT
NESAT = number of times ESAT with ESAT = VSAT / Responsivity (typical illumination conditions)
TI = integration time TV = image to memory transfer time
Figure 14 : Smearing effect
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Quantum Efficiency
Figure 15 : Spectral response.
IMAGE QUALITY GRADE Blemish Max area of 2 x 2 defective pixels Clusters Less than 7 contiguous defects in a column Columns More than 7 contiguous defects in a column General conditions Room temperature ..................................................................................................................................................................25C Frequency .....................................................................................................................................................................30 images/s .............................................................................................................................................................typical operating conditions Considered image zone .............................................................................................................................................1024 x 1024 Light source ....................................................................................................2854 K with BG38 filter + F/3.5 optical aperture At Vos =0.7 Vsat. TYPE Blemishes / clusters Columns In darkness Blemishes / clusters Columns (*) reference is Vo : average darkness signal a > 10 mV (*) a > 5 mV (*) WHITE a > 20 % Vos a > 10 % Vos BLACK eai 30 % Vos eai 10 % Vos
Number of defects Total pixel number affected by blemishes and clusters: .......................................................................................................100 Maximum number of clusters:.....................................................................................................................................................10 Maximum number of columns:......................................................................................................................................................5 a : amplitude of video signal of defect with respect to mean output voltage Vos Ordering code : TH7888AVRHRB TH7888ACBHRB (OPTIONAL: with integrated Peltier cooler)
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PACKAGE OUTLINE DRAWING (standard)
*
*
Legend All values are in mm. 1 2 3 4 5 6 7 : : : : : : : black alumina 40 pins PGA package black optical mask 400nm - 700 nm AR coated window (R<1 % per side) Metal back, (CuW - copper tungsten) gold plated. Electrically grounded (VSS). Optical center. first useful pixel (readout through VOS1) mechanical reference
*
O3.04
0.04
0.5
Mechanical distance Ztop Zbottom 2.82 0.31 1.68 0.15
Optical distance 2.31 0.29 2.19 0.17
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PACKAGE OUTLINE DRAWING (Peltier option)
*
*
Legend All values are in mm. 1 2 3 4 5 6 7 8 : : : : : : : : black alumina 40 pins PGA package black optical mask 400nm - 700 nm AR coated window (R<1 % per side) Metal part with integrated Peltier element. Metal back, (CuW - copper tungsten) gold plated. Electrically grounded (VSS). Optical center. first useful pixel (readout through VOS1) mechanical reference
*
O3H8
0.5
Mechanical distance Ztop Zbottom 2.98 0.68 4.50 0.32
Optical distance 2.48 0.58 5.00 0.33
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This product is manufactured by THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES - 38521 SAINT-EGREVE / FRANCE. For further information please contact : THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES - Route Departementale 128 - B.P. 46 - 91401 ORSAY Cedex / FRANCE - Tel. : (33)(0) 1.69.33.03.24 / Telefax : (33)(0) 1.69.33.03.21. E-mail : monique.lafrique@tcs.thomson-csf.com - Internet : http://www.tcs.thomson-csf.com
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ORDER CODE : DSTH7888AT/1199
Information furnished is believed to be accurate and reliable. However THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES products are not authorized for use as critical components in life support devices or systems without express written approval from THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES. (c) 1999 THOMSONCSF SEMICONDUCTEURS SPECIFIQUES - Printed in France - All rights reserved.
Cree / realise par Graphic Express - Tel. : 01.46.55.27.24 - 10688 - 11/99


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